METHOD FOR FORMING A RECESS CHANNEL TRANSISTOR

摘要

A method for forming a recess channel transistor is provided to improve the reliability and to enhance the productivity by removing quickly a silicon fence using a wet etching process under hydrogen peroxide and ammonium hydroxide conditions. An isolation layer(118) for defining an active region is formed on a substrate(111). A trench is formed within the active region. A wet etching process is performed on the trench to remove a silicon fence, wherein the silicon fence exists between the trench and the isolation layer. The wet etching process is performed by using a predetermined etching solution containing ammonium hydroxide and hydrogen peroxide. The wet etching process is performed in a processing temperature of 80 °C or more.