发明名称 GROUP III NITRIDE LIGHT RECEIVING AND EMITTING DEVICES USING TRANSPARENT CONDUCTING OXYNITRIDE-BASED MULTI N-TYPE SCHOTTKY AND OHMIC CONTACT LAYERS AND METHOD OF MANUFACTURING THEREOF
摘要 An optical device and its manufacturing method are provided to improve current-voltage characteristics and to enhance the efficiency of device by enhancing ohmic contact interfacial characteristics with an N type nitride based clad layer using a TCON(Transparent Conducting OxyNitride) layer. A high transparent multi-N type schottky contact layer(20) is formed on an N type nitride based clad layer(10). The high transparent multi-N type schottky contact layer includes at least one TCON layer. The main gradient of the TCON layer is one selected from a group consisting of In, Zn, Cd, Ga, Al, Mg, Ti, Mo, Ta, V, Cr, Nb, Zr, Ag, Ni, Cu, Co, Au, Pt, Re, Ir, W, Ru or Pd.
申请公布号 KR20070063913(A) 申请公布日期 2007.06.20
申请号 KR20050124260 申请日期 2005.12.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SEONG, TAE YEON
分类号 H01L33/00 主分类号 H01L33/00
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