| 摘要 |
A single crystal ingot growing apparatus is provided to improve a thermal efficiency without an additional apparatus and the change of layout by controlling a local temperature of a growing furnace using different conductivities according to portions of a heat insulating member. A single crystal ingot growing apparatus includes a crucible(4) for storing a material solution, a heater, and a lateral heat insulating member. The heater(5) is arranged around the crucible to melt the material solution. The lateral heat insulating member(8) is used for enclosing the crucible and the heater. The heat insulating effect of an upper portion is different from that of a lower portion in the lateral heat insulating member.
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