MASK FOR CRYSTALLIZING SILICON AND METHOD FOR CRYSTALLIZING SILICON WITH THE MASK

摘要

A silicon crystallizing mask and a silicon crystallizing method using the same are provided to reduce a doubly irradiated region and to improve electrical properties of a crystallized silicon layer by reducing gradually the amount of a transmitted laser beam from a center portion to an outer portion using a slit. A silicon crystallizing mask(400) includes a main opening portion and a slit. The main opening portion is used for transmitting a laser beam. The slit(410) is formed at both ends of the main opening portion. The slit includes a sub opening portion capable of reducing gradually a transmitted amount of the laser beam from a center portion to an outer portion.