| 摘要 |
A method for manufacturing a fin-step type transistor is provided to acquire a uniform doping profile from a triple channel structure by performing a channel ion implantation using two-step processing. An active region(200) is defined on a semiconductor substrate(100) by using a trench isolation layer(122'). A first region(210) and a second region(220) are defined within the active region by an etching process. The first region is a recessed region. The trench isolation layer is partially removed from the resultant structure to expose lateral portions of the first and second regions to the outside. A tilt ion implantation is performed on the resultant structure under a first angle condition. A second tilt ion implantation is performed on the resultant structure under a second angle condition. The second angle is smaller than the first angle. A gate insulating layer and a gate stack are formed on the resultant structure.
|
