| 摘要 |
A method for manufacturing a storage node contact plug in a semiconductor device is provided to enhance characteristics of the device by preventing the impurity of a hard mask from diffusing into an interlayer dielectric in a storage node contact plug conductive layer forming process under a high temperature condition using two-step plasma treatments. An interlayer dielectric is formed on a semiconductor substrate(31). A hard mask pattern(36) is formed on the interlayer dielectric by using first and second plasma treatments. The hard mask pattern is composed of a first layer for reducing film stress, a second layer for securing mechanical intensity and a third layer used as a hard mask. A storage node contact hole(37) is formed by etching selectively the interlayer dielectric using the hard mask pattern as an etch mask. A helium plasma treatment is used as the first plasma treatment. A hydrogen plasma treatment is used as the second plasma treatment.
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