发明名称 METHOD OF FORMING A PHOTO MASK USING A LIGHT TRANSMITTANCE COMPENSATION THROUGH SURFACE TREATMENT
摘要 Provided is a method for manufacturing a photomask by using a light transmittance correction at a specific wavelength via treating chlorine plasma selectively on a specific portion of the photomask to control critical dimension. The method for manufacturing a photomask comprises the steps of: forming a light-shielding film on a transparent substrate(1); forming a resist pattern on the light-shielding film(3); etching the light-shielding film with resist pattern as an etching mask to form a light-shielding pattern(5); carrying out a chlorine plasma treatment on the substrate having the light-shielding pattern so as to perform a light transmittance correction to a desired level; and removing the resist pattern(7).
申请公布号 KR20070063213(A) 申请公布日期 2007.06.19
申请号 KR20050123223 申请日期 2005.12.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JANG, IL YONG;KWON, HYUK JOO;HUH, SUNG MIN;PARK, YOUNG JU
分类号 G03F1/68;G03F1/54 主分类号 G03F1/68
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