METHOD OF FORMING A PHOTO MASK USING A LIGHT TRANSMITTANCE COMPENSATION THROUGH SURFACE TREATMENT
摘要
Provided is a method for manufacturing a photomask by using a light transmittance correction at a specific wavelength via treating chlorine plasma selectively on a specific portion of the photomask to control critical dimension. The method for manufacturing a photomask comprises the steps of: forming a light-shielding film on a transparent substrate(1); forming a resist pattern on the light-shielding film(3); etching the light-shielding film with resist pattern as an etching mask to form a light-shielding pattern(5); carrying out a chlorine plasma treatment on the substrate having the light-shielding pattern so as to perform a light transmittance correction to a desired level; and removing the resist pattern(7).
申请公布号
KR20070063213(A)
申请公布日期
2007.06.19
申请号
KR20050123223
申请日期
2005.12.14
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
JANG, IL YONG;KWON, HYUK JOO;HUH, SUNG MIN;PARK, YOUNG JU