| 摘要 |
A semiconductor device and a manufacturing method thereof are provided to obtain a driving current, to reduce a threshold voltage, and to improve body effect and gate on/off characteristic by forming a recess channel region including a vertical SOI channel region formed on a sidewall of an isolation layer of a gate low portion. An isolation layer(130) for defining an active region is formed on a semiconductor substrate(110) having a pad dielectric. The pad dielectric is selectively etched by using a recess gate mask to expose the semiconductor substrate of a recess region. A first spacer is formed on a sidewall of the recess region. The semiconductor substrate exposed on a lower portion of the recess region is etched by using the first spacer as an etch mask to form a first recess. A second spacer is formed on the first spacer and the sidewall of the first recess. The semiconductor substrate exposed on a lower portion of the first recess is etched by using the second spacer as an etch mask to form a second recess. A recess channel region includes a vertical SIO channel region(165) formed on a sidewall of the isolation layer at both sides from a longitudinal direction of a gate region. The first and second spacers and the pad dielectric are removed to expose the semiconductor substrate. A gate dielectric(160) is formed on an upper portion of the exposed semiconductor substrate. A gate(190) comprised of a stack structure of a gate electrode(170) and a gate hard mask layer pattern(180) is formed on an upper portion of the recess channel region of the gate region.
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