| 摘要 |
A method for forming fine line patterns is provided to prevent the collapse of patterning and the irregular etching of top portion of patterns. The method comprises the steps of: forming a material layer on a semiconductor substrate(21); forming a first photosensitive film pattern on the material layer; primarily etching the material layer with the first photosensitive film pattern as an etching mask; stripping the first photosensitive film pattern; forming a second photosensitive film pattern(27) on which a predetermined portion of the material layer is open while the primarily etched surface on the material layer is covered; secondarily etching the open portion of the material layer with the second photosensitive film pattern(27) as an etching mask so as to form a material pattern in a form of line having the primarily etched surface and the secondarily etched surface; and stripping the second photosensitive film pattern(27).
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