| 摘要 |
A method for manufacturing a semiconductor device having a tungsten silicide gate structure is provided to prevent the generation of voids in an interlayer dielectric gap-fill process and to prevent the bridge between a gate stack and a landing plug contact by acquiring a substantially vertical profile from the gate structure in a light oxidation using an undercut structure of a side portion of a tungsten silicide pattern. A gate stack structure composed of a gate conductive layer(121), a metal silicide layer(131) and a hard mask(141) is formed on an active region of a semiconductor substrate(100) via a gate insulating layer(111). At this time, an undercut structure is formed at a side portion of the metal silicide layer. A sidewall oxide layer(150) having a substantially vertical profile is formed at sidewalls of the gate conductive layer and the metal silicide layer by using a light oxidation.
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