| 摘要 |
An internal voltage generating circuit in a DRAM is provided to reduce current consumption during a self refresh operation, by enabling only a second internal voltage driving unit. In an internal voltage generating circuit(100) of a DRAM for generating an internal voltage to a memory array including a number of memory blocks, an internal voltage driving part(110) includes a first and a second internal voltage driving unit supplying the internal voltage to each corresponding memory block. The first internal voltage driving unit is enabled in response to the enabling of a first internal control signal, and the second internal voltage driving unit is enabled in response to the enabling of a second internal control signal. A first logic part(130) enables the first internal control signal in response to the enabling of a comparison signal, and is disabled by a refresh control signal. A second logic part(150) enables the second internal control signal in response to the enabling of the comparison signal. A comparison part(170) generates the comparison signal by comparing a reference signal with a feedback voltage fed back from the memory array.
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