| 摘要 |
A semiconductor device and its manufacturing method are provided to control easily a threshold voltage in spite of the use of a metal gate electrode layer and to increase the resistance against a heat treatment and an oxidation condition by using an HfNbO layer as a gate insulating layer. A semiconductor device includes an HfNbO layer, a barrier metal, and a gate conductive layer. The NfNbO layer(240) is formed on a semiconductor substrate as a gate insulating layer. The barrier metal(250) is formed on the HfNbO layer. The gate conductive layer(260) is formed on the barrier metal. The semiconductor device further includes a silicon oxide layer or a silicon oxynitride layer interposed between the substrate and the HfNbO layer.
|
