| 摘要 |
A method for fabricating a semiconductor device is provided to form a contact hole with a fine wiring width by using first and second mask patterns as a mask. An interlayer dielectric(15) is deposited on a silicon substrate(10) to cover a gate(13) formed in the substrate. A first mask layer(16) is formed on the interlayer dielectric, and then is patterned to form a first mask pattern having a first hole size. A second mask layer is uniformly formed on the first mask pattern and the interlayer dielectric. The second mask layer is etched to form a second mask pattern(17a) remaining at a sidewall of the first mask pattern. The interlayer dielectric is etched using the first and second mask patterns as a mask to form a contact hole(18) having a second hole size on the interlayer dielectric.
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