| 摘要 |
There is provided a method of fabricating a semiconductor device comprising the steps of applying resist to a polysilicon film formed across the surface of a substrate and forming a plurality of openings in a resist pattern, for determining a spacing between floating gates adjacent to each other, causing the openings of the resist pattern to undergo uniform contraction by use of, for example, deformation due to thermal flow to thereby form other openings, and etching portions of the polysilicon film, in the openings as contracted to thereby form the floating gate on both sides of the respective openings as contracted. With the method described, it becomes possible to reduce the spacing between the floating gates adjacent to each other above the resolution limit of an exposure system, thereby enlarging a floating gate width.
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