发明名称 |
CMOS image sensor and method for fabricating the same |
摘要 |
A CMOS image sensor and a method for fabricating the same is disclosed, to decrease a darkcurrent generated in the boundary between a diffusion area of a photodiode and a device isolation layer, which includes a first conductive type semiconductor substrate having an active area and a device isolation area, the active area including a photodiode and a transistor; a device isolation layer formed in the device isolation area of the semiconductor substrate; a second conductive type diffusion area formed in the photodiode of the semiconductor substrate at a predetermined interval from the device isolation layer; a gate insulating layer and a gate electrode formed in the transistor of the semiconductor substrate; and a first conductive type first diffusion area formed in the semiconductor substrate of the boundary between the second conductive type diffusion area and the device isolation layer.
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申请公布号 |
US7232712(B2) |
申请公布日期 |
2007.06.19 |
申请号 |
US20040975200 |
申请日期 |
2004.10.28 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
HAN CHANG HUN |
分类号 |
H01L21/339;H01L27/146;H04N5/335 |
主分类号 |
H01L21/339 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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