Method for fabricating semiconductor device with recessed channel region

摘要

Disclosed is a method for fabricating a semiconductor device with a plurality of recessed channel regions. This method includes the steps of: forming a plurality of device isolation layers in a substrate; forming a hard mask nitride layer, a hard mask oxide layer and a hard mask polysilicon layer on the device isolation and the substrate, thereby obtaining a hard mask pattern; forming a plurality of trenches in the predetermined regions of the substrate with use of the hard mask pattern to expose a plurality of recessed channel regions; selectively removing the hard mask pattern; and forming a plurality of gate structures in the plurality of trenches.