| 摘要 |
Embodiments of the current invention describe ammonia hydroxide treatments for surfaces. In one embodiment, a method and a cleaning solution including ammonium hydroxide (NH<SUB>4</SUB>OH), water (H<SUB>2</SUB>O), a chelating agent, and a surfactant for cleaning silicon germanium substrates are described. The cleaning solution does not include hydrogen peroxide (H<SUB>2</SUB>O<SUB>2</SUB>) because hydrogen peroxide etches germanium. In another embodiment, a method of terminating oxidized surfaces on semiconductor substrates with terminating groups that promote the bonding of the oxidized surface to another surface with a surface treatment containing ammonium hydroxide (NH<SUB>4</SUB>OH) is described. The oxidized surface is immediately bonded to a second substrate after evaporation of the surface treatment.
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