| 摘要 |
A method for reading a memory cell, wherein the memory cell comprises two source/drain regions and a gate, wherein the source/drain regions are each connected to a respective local bitline, and, wherein one of the source/drain regions of a neighboring memory cell is connected to one of the local bitlines, the other source/drain region of the neighboring memory cell being connected to another local bitline, comprising the steps of connecting the local bitline that connects the source/drain region of the memory cell and the source/drain region of the neighboring memory cell to a first global bitline, connecting the local bitline that connects the other source/drain region of the memory cell to a second global bitline, connecting the local bitline that connects the other source/drain region of the neighboring memory cell to one of a plurality of local power rails, applying a gate potential to the gate of the memory cell, applying a potential to the first global bitline and applying another potential to the second global bitline, and measuring the current flowing through the first global bitline.
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