发明名称 |
Resist composition and patterning process |
摘要 |
Chemically amplified positive resist compositions comprising a polymer obtained by copolymerizing a silicon-containing monomer with a polar monomer having a value of LogP or cLogP of up to 0.6 and optionally hydroxystyrene, a photoacid generator and an organic solvent are sensitive to high-energy radiation and have a high sensitivity and resolution at a wavelength of less than 300 nm and improved resistance to oxygen plasma etching.
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申请公布号 |
US7232638(B2) |
申请公布日期 |
2007.06.19 |
申请号 |
US20030427939 |
申请日期 |
2003.05.02 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
HATAKEYAMA JUN;KURIHARA HIDESHI;TAKEDA TAKANOBU;WATANABE OSAMU |
分类号 |
G03F7/004;G03F7/038;G03F7/039;G03F7/075;G03F7/38;G03F7/40 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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