| 摘要 |
An active matrix type light emitting diode element and a manufacturing method thereof are provided to prevent the element from being deteriorated by moisture and impure gas. An active matrix type light emitting diode element includes an array substrate(52), an inorganic material planarization film(60), an anode electrode(62), a light emitting unit(66), and a cathode electrode(68). The array substrate(52) has a thin film transistor unit. The inorganic material planarization film(60) covers the thin film transistor unit. The anode electrode(62) is formed to be contacted with a drain region of the thin film transistor unit through a contact hole which is formed on the inorganic material planarization film(60). The light emitting unit(66) is formed on the inorganic material planarization film(60) and the anode electrode unit(62). The cathode electrode(68) is formed on the light emitting unit(66). |
