Electro-optical device, driving circuit, and electronic apparatus

摘要

To prevent an electrostatic discharge in transistors constituting a driving circuit built in a substrate. The shift register and the level shifter constituting a scanning line driving circuit include TFT elements respectively which employing the polysilicon layer formed on the element substrate as a semiconductor layer. Each TFT element constituting the level shifter has a gate electrode opposing the channel region of the polysilicon layer with an insulating layer interposed therebetween. Each polysilicon layer is shared by a plurality of TFT elements with being separated from each other. The total area 'S' of each polysilicon layer which opposes the gate electrode of the TFT element is 3000 mum² or less.