| 摘要 |
A method for manufacturing a semiconductor device is provided to enhance threshold voltage characteristics and to improve refresh characteristics by performing stably an ion implantation using a double layer structure composed of an amorphous carbon layer and a photoresist layer as a cell halo mask. A gate pattern(33) is formed on a semiconductor substrate(31). An amorphous carbon layer(36) is formed along an upper surface of the gate pattern. A photoresist layer(37) is coated on the amorphous carbon layer. A photoresist pattern is formed by etching selectively the photoresist layer. The photoresist pattern has an opening capable of exposing a bit line contact node portion of the substrate to the outside. The amorphous carbon layer is selectively etched by using the photoresist pattern as an etch mask. A cell halo ion implantation is performed on the bit line contact node portion by using the photoresist pattern and the amorphous carbon layer as a cell halo mask.
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