| 摘要 |
A top plate of a semiconductor wafer chuck is provided to decrease remarkably the insulation resistance by using Si and Au. A top plate(10) of a semiconductor wafer chuck includes a chrome film, a gold film and a silicon layer. The chrome film(14) and the gold film(16) are sequentially formed on front and rear surfaces of the top plate, respectively. The silicon layer(12) is formed at a lateral portion of the top plate. The chrome film and the gold film are formed on the front and rear surfaces of the top plate by a vacuum deposition process. The silicon layer is from at the lateral portion of the top plate by the vacuum deposition process.
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