METHOD OF FABRICATING THE SEMICONDUCTOR DEVICE HAVING RECESSED CHANNEL

摘要

A method for manufacturing a semiconductor device with a recess channel is provided to prevent the generation of a stepped portion at a trench isolation layer and to increase an overlay margin between a gate stack and a recess channel trench by forming the recess channel trench and forming the gate stack like a wave type structure using an oval contact type mask pattern. A trench isolation layer(210) for defining an active region(202) is formed on a semiconductor substrate. A recess channel trench is formed within the active region by performing an etching process using an oval contact type mask pattern capable of exposing partially the active region as an etch mask. A wave type gate stack(240) is formed on the resultant structure. The width of the gate stack on the recess channel trench is relatively large compared to that on the trench isolation layer.