| 摘要 |
A method for forming a dummy oxide layer is provided to improve the uniformity of a pattern density of a silicon substrate by enhancing the uniformity of height of the dummy oxide layer using a planarization process instead of an etching process. A pad oxide layer(24) and a nitride layer(26) are formed on a silicon substrate(22). A trench is formed on the resultant structure by etching selectively the nitride layer, the pad oxide layer and the substrate. A first oxide layer(34) for filling the trench is formed on the resultant structure. A planarization process is performed on the first oxide layer. A photoresist pattern for opening the trench portion is aligned on the planarized first oxide layer. A second oxide layer(38) is formed on the photoresist pattern. The second oxide layer is planarized, so that an upper surface of the photoresist pattern is exposed to the outside. Then, the photoresist pattern is removed therefrom.
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