METHOD FOR MODULATING GATE INSULATION LAYER EDGE THICKNESS OF SEMICONDUCTOR DEVICE

摘要

A method for controlling the thickness of an edge of a gate insulating layer in a semiconductor device is provided to reduce leakage current, to improve TDDB(Time Dependent Dielectric Breakdown) characteristics and to enhance a gate oxide integrity. A first mask is formed on a semiconductor substrate(1) except for a semiconductor element forming region. A plasma nitridation is performed thereon. The first mask is removed therefrom. A cleaning process is performed on the resultant structure by using SC-1 or SC-2. A relatively thin gate insulating layer(5) is formed on the semiconductor element forming region by an oxidation process. A gate electrode conductive layer is formed on the gate insulating layer. A second mask is formed thereon. A gate electrode(6) is formed on the resultant structure by etching the gate electrode conductive layer using the second mask as an etch mask.