METHOD FOR MANUFACTURING CMOS IMAGE SENSOR

摘要

A method for manufacturing a CMOS image sensor is provided to improve the sensibility and to reduce the crosstalk by reducing the loss of light and decreasing the distance between a microlens and a photodiode using a decreased thickness of an interlayer dielectric at a portion between the microlens and the photodiode. A plurality of photodiodes(201) and a variety of transistors(202) are formed on a semiconductor substrate(200). A first interlayer dielectric(203) is formed on the resultant structure. A first metal line is formed on the first interlayer dielectric of a sensing region and a peripheral driving region. A second interlayer dielectric(204) is formed on the resultant structure. A second metal line is formed on the second interlayer dielectric of the sensing region and peripheral driving region. A third interlayer dielectric(206) is formed thereon. A third metal line is formed on the third interlayer dielectric of the peripheral driving region. A fourth interlayer dielectric(207) is formed thereon. A fourth metal line is formed on the fourth interlayer dielectric of the peripheral driving region. A pad is formed on the fourth interlayer dielectric of a pad region. A planarization layer(209) is formed on the resultant structure. The planarization layer and the fourth interlayer dielectric are removed from a sensing region of the resultant structure and the planarization layer is removed from an upper portion of the pad.