METHOD OF FABRICATING THE SEMICONDUCTOR DEVICE HAVING RECESSED CHANNEL

摘要

A method of fabricating a semiconductor device having a recessed channel is provided to prevent the degradation of the semiconductor device by removing a horn structure at a boundary part between a trench isolation layer and an active region. A trench isolation layer(220) is formed to define an active region(201) of a semiconductor substrate(200). A trench(230) for recess channel is formed by etching the active region defined by the trench isolation layer. An epitaxial layer(240) is formed on the semiconductor substrate which is exposed by the trench for recess channel. A gate insulating layer and a gate electrode layer are formed to bury the trench for recess channel.