发明名称 METHOD FOR FABRICATING PATTERN USING DOUBLE EXPOSURE TECHNIQUE
摘要 A method for forming patterns using a double exposure technique is provided to form uniform patterns by improving an illumination system and an exposure method when patterns having directions perpendicular to each other are formed. In order to form a first pattern(620) in the same direction as a cell region within a peripheral circuit region, and a second pattern(630) in a vertical direction to the cell region, the method for forming patterns using a double exposure technique comprises the steps of: performing a first exposure process using a first illumination system and a first photomask which blocks a pattern in the same direction as the cell region within the peripheral circuit region so as to form the first pattern(620); and performing a second exposure process using a second illumination system and a second photomask which blocks the peripheral circuit region in a vertical direction to the cell region within the peripheral circuit region so as to form the second pattern(630),.
申请公布号 KR20070062213(A) 申请公布日期 2007.06.15
申请号 KR20050122009 申请日期 2005.12.12
申请人 HYNIX SEMICONDUCTOR INC. 发明人 YUNE, HYOUNG SOON
分类号 G03F7/00;G03F7/20 主分类号 G03F7/00
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