| 摘要 |
An organic thin film transistor, a method for manufacturing the same, and a flat display apparatus comprising the same are provided to prevent short circuit by depositing and patterning a conductive material onto an opening of a gate insulating layer. Source/drain wirings(130a,130b) and a gate electrode(120) are formed on a substrate(110). A gate insulating layer(140) including an opening for exposing the source/drain wirings is formed on the source/drain wirings and the gate electrode. Conductive materials(170a,170b) come in contact with the source/drain wirings through the opening. The conductive materials are deposited by a vacuum deposition method and the deposited conductive materials are patterned partially. An organic semiconductor layer(150) is electrically connected to the conductive materials.
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