| 摘要 |
A CMOS image sensor is provided to prevent the generation of noises and to reduce the delay of a signal by increasing the width of a transfer transistor using a partially increased width portion of an active region. A CMOS image sensor includes a photodiode(110) within an active region of a substrate, a transfer transistor(120), a reset transistor(130), a driving transistor(140) and a select transistor(150). A floating diffusion region(160) is formed between the transfer transistor and the reset transistor. The transfer transistor is formed between the photodiode and the floating diffusion region. The width of the active region is larger at a predetermined portion between the photodiode and the floating diffusion region than at the other portion.
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