CMOS IMAGE SENSOR AND METHOD FOR FABRICATING OF THE SAME

摘要

A CMOS image sensor and a manufacturing method thereof are provided to enhance a photo sensitivity by adding a plurality of inner lenses made of polyoxide. A plurality of photodiodes(202) are formed in a substrate(201). An insulating layer(203) is formed on the entire surface of the resultant structure. A plurality of inner lenses(204) are formed on the insulating layer corresponding to the photodiodes. A first planarization layer(205) is formed on the resultant structure. A color filter layer(206) is formed on the first planarization layer corresponding to each photodiode. A second planarization layer(207) is formed on the resultant structure including the color filter layer. A plurality of microlenses(208) are formed on the second planarization layer corresponding to the photodiodes and inner lenses. Each inner lens is made of polyoxide.