发明名称 PROCEDE DE FABRICATION DE MASQUE LITHOGRAPHIQUE EN REFLEXION ET MASQUE ISSU DU PROCEDE
摘要 The invention relates to a process for fabricating an extreme ultraviolet photolithography mask operating in reflection, comprising a substrate, a mirror structure (uniformly deposited on the substrate, and an absorbent element forming a pattern deposited on the mirror structure, characterized in that the absorbent element is obtained by the irradiation and then development of an organometallic resist layer deposited on the mirror structure.
申请公布号 FR2894691(A1) 申请公布日期 2007.06.15
申请号 FR20050012611 申请日期 2005.12.13
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ETABLISSEMENT PUBLIC A CARACTERE INDUSTRIEL ET COMMERCIAL 发明人 CHARPIN NICOLLE CHRISTELLE
分类号 G03F1/22;G03F1/24;G03F1/56;G03F7/004;G03F7/20;G03F7/26 主分类号 G03F1/22
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