发明名称 |
PROCEDE DE FABRICATION DE MASQUE LITHOGRAPHIQUE EN REFLEXION ET MASQUE ISSU DU PROCEDE |
摘要 |
The invention relates to a process for fabricating an extreme ultraviolet photolithography mask operating in reflection, comprising a substrate, a mirror structure (uniformly deposited on the substrate, and an absorbent element forming a pattern deposited on the mirror structure, characterized in that the absorbent element is obtained by the irradiation and then development of an organometallic resist layer deposited on the mirror structure.
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申请公布号 |
FR2894691(A1) |
申请公布日期 |
2007.06.15 |
申请号 |
FR20050012611 |
申请日期 |
2005.12.13 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ETABLISSEMENT PUBLIC A CARACTERE INDUSTRIEL ET COMMERCIAL |
发明人 |
CHARPIN NICOLLE CHRISTELLE |
分类号 |
G03F1/22;G03F1/24;G03F1/56;G03F7/004;G03F7/20;G03F7/26 |
主分类号 |
G03F1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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