WELL PHOTORESIST PATTERN OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

摘要

A well photoresist pattern of a semiconductor device and a forming method thereof are provided to realize normally a threshold voltage and a saturated current of the device by restraining a well proximity effect using an upper curved portion of the well photoresist pattern itself. A sacrificial oxide layer(20) is formed on a semiconductor substrate(10). An HMDS(Hexa Methyl Di Silazane) layer is formed on the sacrificial oxide layer. A photoresist layer is formed on the HMDS layer. A soft baking process is performed on the photoresist layer. An exposure process is performed on the photoresist layer by using a well mask capable of transmitting selectively light. A baking process is performed on the photoresist layer. A well photoresist pattern(30b) is formed on the resultant structure by performing a developing process on the photoresist layer. A hard baking process is performed on the well photoresist pattern. A well ion implantation is performed on the resultant structure by using the well photoresist pattern. The well photoresist pattern has an upper curved portion.