METHOD FOR FABRICATING OF MULTI-LAYER TRANSISTOR USING LASER INDUCED EPITAXIAL GROWTH AND CMP

摘要

A method for fabricating a multi-layer transistor using a laser induced epitaxial growth and CMP is provided to remove efficiently a protrusion from a single crystal silicon layer by performing a CMP process at a low removal speed by using high-flatness slurry. A first active layer(110) is formed on a semiconductor substrate(100). A first transistor(130) is formed on the first active layer. A first insulating layer(140) is formed on the semiconductor substrate. A first epitaxial silicon contact is formed on the first insulating layer. An amorphous silicon layer is formed on the first insulating layer. A single crystal silicon layer(160') is formed by single-crystallizing the amorphous silicon layer. The single crystal silicon layer is planarized by performing a CMP process for removing a protrusion of the single crystal silicon layer. A second active layer is formed by patterning the single crystal silicon layer. A second transistor is formed on the second active layer.