| 摘要 |
An image sensor and a manufacturing method thereof are provided to prevent light from being transmitted into an unwanted portion except for a microlens and to improve the sensitivity of a photodiode by removing a gap between adjacent microlenses in a microlens forming process using a mold frame instead of a photo etch process. A plurality of photodiodes(400) are formed in a semiconductor substrate(100). An interlayer dielectric(200) is formed on the substrate. A color filter layer(300) is formed on the interlayer dielectric. A planarization layer(250) is formed on the resultant structure. An insulating layer is coated on the planarization layer. A mold frame(600) made of teflon is formed on the insulating layer. The mold frame includes concave portions. The mold frame is pressurized against the resultant structure by using a pressing plate or pressurizing roller. Then, microlenses are formed on the resultant structure by removing the mold frame.
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