| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a nitride semiconductor light-emitting element capable of preventing light absorption on an SiC substrate, easily removing ohmic contact at a side opposite to a side where a nitride semiconductor crystal is laminated on the SiC substrate, and preventing a semiconductor layer containing In from being broken down. <P>SOLUTION: A metal film 1 is formed on the back of the conductive SiC substrate 2 doped with impurities by vapor deposition or sputtering by selecting one metal from Ni, Ti, Pd, Fe, Ru, Os, Ge, Sn, V, Ta, and Nb. The SiC substrate 2 where the metal film 1 is formed on the back is annealed at a high temperature. An ohmic contact region 3 is formed on the interface between the SiC substrate 2 and the metal film 1 by high-temperature annealing. Then, the nitride semiconductor crystal containing In is laminated at a side opposite to a surface where an ohmic contact region 3 is formed on the SiC substrate 2. <P>COPYRIGHT: (C)2007,JPO&INPIT |
