| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a DBR film of superlattice structure exhibiting excellent reflectance in which emission characteristics can be enhanced. <P>SOLUTION: The semiconductor light emitting diode comprises a silicon single crystal substrate 101, an intervention layer 103 of III nitride semiconductor formed thereon, and light emitting portions (105, 106 and 107) of pn heterojunction structure formed on the intervention layer 103 wherein the intervention layer 103 is composed of a III nitride semiconductor containing aluminum and a superlattice structure 104 composed of a plurality of III nitride semiconductors containing aluminum and having different aluminum compositions is provided at the middle of the intervention layer 103 and the light emitting portions (105, 106 and 107). <P>COPYRIGHT: (C)2007,JPO&INPIT |
