发明名称 |
ETCHING COMPOSITION FOR THIN-FILM TRANSISTOR LIQUID CRYSTAL DISPLAY DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide an etching composition for a thin-film transistor liquid crystal display device. SOLUTION: The etching composition of this invention has the effect on etching an amorphous ITO comprising pixel electrodes of the thin-film transistor liquid crystal display device and an Mo/Al-Nd double film of a gate interconnection material constituting a thin film transistor (TFT) by a single process with the use of the same composition without an undercut phenomenon of the Al-Nd of a lower film to obtain an excellent taper, and at the same time, has also the effect on forming an excellent profile of an Mo single film of a source/drain interconnection material. COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2007150107(A) |
申请公布日期 |
2007.06.14 |
申请号 |
JP20050344467 |
申请日期 |
2005.11.29 |
申请人 |
LG PHILLIPS LCD CO LTD;DONGJIN SEMICHEM CO LTD |
发明人 |
KIM JONG IL;LEE KYOUNG MOOK;SONG KYE CHAN;CHO SAMUYON;SHIN HYUNCHOL;KIM NAMUSO;LEE KI BEOM |
分类号 |
H01L21/308;G02F1/1343;G02F1/1368;H01L21/3213;H01L21/336;H01L29/786 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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地址 |
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