| 摘要 |
PROBLEM TO BE SOLVED: To prevent occurrence of a disturbance voltage or to reduce occurrence of the disturbance voltage to an uninfluential level, without bringing complicate circuit design and increase of a layout area in a plate voltage fixed type nonvolatile semiconductor storage device which is equipped with a selection transistor and a nonvolatile storage element. SOLUTION: A reset transistor is prepared between a node for connecting the nonvolatile storage element with the selection transistor and a common plate line. Also, a voltage transition of the common plate line at the supply of power and the interruption of power occurs at the same transition timing of the power source voltage, and a period when a voltage of a first electrode node of the nonvolatile storage element becomes the floating state and a period when the voltage is fixed, are in existence by ON/OFF operation of the reset transistor during the voltage transition of the common plate line, and further a potential of the common plate line CP is made to change so that a turning-on period of the reset transistor Qn2 is extended within the voltage transition period of the common plate line. COPYRIGHT: (C)2007,JPO&INPIT
|
