| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist pattern thickening material that can utilize ArF excimer laser light, can thicken a resist without depending on the size, has superior etching durability and can efficiently, easily and inexpensively form a fine resist space pattern that exceeds the exposure limits, and to provide a process for forming a resist pattern, a semiconductor device and a method for manufacturing the device. SOLUTION: The material contains resin and a compound expressed by general Formula (1). In the Formula (1), R represents a cyclic structure compound; X represents a monovalent organic group, containing a carboxyl group; Y represents a hydroxyl group, alkyl group, alkoxy group, amino group, alkyl-substituted amino group, carbonyl group or alkoxy carbonyl group; m represents an integer of 1 or larger; and n represents an integer of 0 or larger. COPYRIGHT: (C)2007,JPO&INPIT |
