| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and apparatus for growing a single crystal, by which the control of particle arrangement can be achieved with higher degree of freedom. SOLUTION: The apparatus has laser sources 11, 12, 13 as heating sources, a part 14 to be heated, a raw material rod supported by an upper crystal driving shaft, a seed crystal rod supported by a lower crystal driving shaft, and a quartz tube 22. The single crystal is grown by arranging a plurality of magnetic field imparting means 23, 24, 25 around the part 14 to be heated at an equal interval in the circumferential direction in such a manner that they are arranged alternately with the laser sources 11, 12, 13, then heating and melting the raw material rod and the seed crystal rod in the part 14 to be heated by concentrating the laser sources 11, 12, 13 to the part 14 to be heated, and at the same time, imparting a rotating magnetic field having a phase difference to a floating zone by supplying a three phase or multiphase alternating current to coils 29, 30, 31 of the plurality of magnetic field imparting means 23, 24, 25. COPYRIGHT: (C)2007,JPO&INPIT
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