发明名称 Reference voltage generation circuit
摘要 In a reference voltage generation circuit, a bandgap reference circuit (BGR circuit) 1 includes diode element D 1 and D 2 having different current densities, three resistive elements R 1 , R 2 and R 3 , a P-type first transistor Tr 1 for supplying a current to a reference voltage output terminal O, a P-type second transistor Tr 2 for determining a drain current flowing through the first transistor Tr 1 by a current mirror structure, and a feedback type control circuit 11 . The BGR circuit 1 is connected to a pull-down circuit 2 . The pull-down circuit 2 includes a resistive element R 4 and a P-type transistor Tr 4 which are connected in series. The resistive element R 4 is connected to a drain terminal of the second P-type transistor Tr 2 . The P-type transistor Tr 4 has a gate terminal connected to the reference voltage output terminal O and a grounded drain terminal. Thus, the number of elements and current consumption in the start-up circuit which shifts the operation from an abnormal stabilization point to a normal stabilization point are reduced.
申请公布号 US2007132505(A1) 申请公布日期 2007.06.14
申请号 US20050588191 申请日期 2005.02.14
申请人 KINOSHITA MASAYOSHI;SAKIYAMA SHIRO 发明人 KINOSHITA MASAYOSHI;SAKIYAMA SHIRO
分类号 G05F1/10;G05F3/28;G05F3/30;H03F3/45 主分类号 G05F1/10
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