METHOD FOR FABRICATING A VERTICAL LIGHT EMITTING DEVICE AND VERTICAL LIGHT EMITTING DEVICE THEREBY

摘要

A method for manufacturing a vertical type light emitting device and the vertical type light emitting device are provided to prevent bending of a compound semiconductor layer by using a conductive substrate having an unevenness with a transparent conductive film. A substrate(100) is prepared. A compound semiconductor layer comprised of a first conductive semiconductor layer(410), an active layer(420), and a second conductive semiconductor layer(430) is formed on the substrate. A transparent conductive film is deposited on the unevenness surface of the substrate to configure a conductive substrate. The conductive substrate is bonded on the second conductor semiconductor layer. A laser is irradiated to the conductive substrate to separate the conductive substrate from the compound semiconductor layer.