发明名称 PLASMA GENERATION METHOD AND DEVICE AND PLASMA TREATMENT DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method and a device in which electron temperature of plasma can be held down, in the plasma generation method and device generating inductively coupled plasma. <P>SOLUTION: The plasma generation method and device is provided with a plasma generating chamber 1, at least one high-frequency antenna 2 installed in the chamber 1, and a high-frequency power supply device (a power source 41 or the like) and generates inductively coupled plasma by impressing high-frequency power supplied from the high-frequency power supply device on gas in the chamber 1 through a high-frequency antenna 2. Also provided is a plasma treatment device utilizing the plasma generation device. The high-frequency antenna 2 has an impedance set at 45 &Omega; or less. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007149638(A) 申请公布日期 2007.06.14
申请号 JP20060178857 申请日期 2006.06.29
申请人 NISSIN ELECTRIC CO LTD;EMD:KK 发明人 KATO KENJI;DEGUCHI HIROSHIGE;YONEDA HITOSHI;KUBOTA KIYOSHI;EBE AKINORI;SETSUHARA YUICHI
分类号 H05H1/46;C23C16/24;C23C16/509;H01L21/205 主分类号 H05H1/46
代理机构 代理人
主权项
地址