发明名称 |
PLASMA GENERATION METHOD AND DEVICE AND PLASMA TREATMENT DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method and a device in which electron temperature of plasma can be held down, in the plasma generation method and device generating inductively coupled plasma. <P>SOLUTION: The plasma generation method and device is provided with a plasma generating chamber 1, at least one high-frequency antenna 2 installed in the chamber 1, and a high-frequency power supply device (a power source 41 or the like) and generates inductively coupled plasma by impressing high-frequency power supplied from the high-frequency power supply device on gas in the chamber 1 through a high-frequency antenna 2. Also provided is a plasma treatment device utilizing the plasma generation device. The high-frequency antenna 2 has an impedance set at 45 Ω or less. <P>COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2007149638(A) |
申请公布日期 |
2007.06.14 |
申请号 |
JP20060178857 |
申请日期 |
2006.06.29 |
申请人 |
NISSIN ELECTRIC CO LTD;EMD:KK |
发明人 |
KATO KENJI;DEGUCHI HIROSHIGE;YONEDA HITOSHI;KUBOTA KIYOSHI;EBE AKINORI;SETSUHARA YUICHI |
分类号 |
H05H1/46;C23C16/24;C23C16/509;H01L21/205 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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