| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory device capable of increasing the contacting area between a semiconductor substrate in a cell array and wiring while reducing a variation in contact resistance, and to provide its manufacturing method. SOLUTION: In an NOR flash memory, regions between rows in the cell array with cell transistors MC have contacts for connecting the semiconductor substrate to the wiring of its upper layer, are arranged in a shape of rows, and insulated and separated by trench type element separating regions STI. The height of an oxide film 11 embedded into an element separating region neighboring to the contact DC is lower than those of embedded oxide films in the element separating regions neighbored to the channel regions CH of the cell transistors, and equal to those of the semiconductor substrates in the channel regions. COPYRIGHT: (C)2007,JPO&INPIT
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