| 摘要 |
PROBLEM TO BE SOLVED: To prevent the occurrence of a clearance because an electrically conductive material is not sufficiently filled. SOLUTION: Constituent materials of a multilayer film 41 are successively deposited on a semiconductor substrate (b), and a plug formation scheduled region and the region surrounding the plug formation scheduled region are removed from the deposited multilayer film 41 (d). Then, the removed regions are backfilled with a single insulating material (f), and a hole is formed using etching in the plug formation scheduled region of the backfilled regions. Then, the formed hole is filled with the electrically conductive material to form a plug. COPYRIGHT: (C)2007,JPO&INPIT
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