| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device of which the expansion of a memory area is attainable. SOLUTION: The semiconductor storage device 1 is equipped with a real memory area 3 having the equal number of memory cell blocks 2 connected to the same plate line and a projected area 7 which includes: a base section 5 provided with a deficiency part 4 wherein the number of memory cell blocks connected to the same plate line is deficient as compared with the real memory area while being adjacent to the real memory area 3; and a top section 6 provided with the number of memory cell blocks equal to the number of deficient memory cell blocks of the deficiency part. Also, the semiconductor storage device 1 has a conversion means for converting an address to be accessed so as to perform memory-access to the memory cell blocks 2 prepared on the top section 6 when the memory access to the deficiency part 4 is requested, and for virtually equalizing the number of memory cell blocks of the deficiency part 4 to be connected to the same plate line. COPYRIGHT: (C)2007,JPO&INPIT
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