| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing material which exhibits high polishing speed of CMP and permits CMP treatment wherein the roughness of metal surface is low and a level difference is small between a metal film and an insulating resin film. <P>SOLUTION: The polishing material for metal is used to polish a surface to be polished having at least an organic insulating material and a copper or a copper alloy. In this case, it contains abrasive grains and an oxidant, its pH is 1.5-3.5, and a neutralization titration value is 0.05 mol/kg or more. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
