发明名称 |
Dual damascene process and method for forming a copper interconnection layer using same |
摘要 |
A method for forming a copper interconnection using a dual damascene process includes forming a second insulating layer on a first insulating layer, the first insulating layer including a lower metal interconnection layer formed therein; forming a photoresist film pattern on the second insulating layer; forming a dry film resist film pattern on the photoresist film pattern; forming a via hole and a trench in the second insulator layer to expose a portion of the lower metal interconnection layer by etching the second insulating layer using the dry film resist film pattern and the photoresist film pattern as an etching mask; removing the DFR film pattern and the photoresist film pattern; forming a copper layer to fill the via hole and the trench; and planarizing the copper layer to form a copper interconnection layer. Planarizing the copper layer is performed using a chemical mechanical polishing method.
|
申请公布号 |
US2007134911(A1) |
申请公布日期 |
2007.06.14 |
申请号 |
US20060634308 |
申请日期 |
2006.12.06 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
KANG JAE-HYUN |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|